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| Semiconductor SBC546 NPN Silicon Transistor Descriptions * General purpose application * Switching application Features * High voltage : VCEO=55V * Complementary pair with SBC556 Ordering Information Type NO. SBC546 Marking SBC546 Package Code TO-92 Outline Dimensions 3.450.1 4.50.1 2.250.1 unit : mm 4.50.1 0.40.02 2.060.1 14.00.40 1.27 Typ. 2.54 Typ. 123 1.200.1 0.38 PIN Connections 1. Collector 2. Base 3. Emitter. KST-9024-000 1 SBC546 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 80 55 5 100 625 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure (Ta=25C) Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF Test Condition IC=1mA, IB=0 VCE=5V, IC=2mA IC=100mA, IB=5mA IC=100mA, IB=5mA VCB=35V, IE=0 VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=200A, f=1KHz, Rg=2K Min. Typ. Max. 55 550 110 900 150 700 600 15 800 4.5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-9024-000 2 SBC546 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC -VBE Fig. 3 IC -VCE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC KST-9024-000 3 |
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